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BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
Rev. 01 -- 6 August 2007 Product data sheet
1. Product profile
1.1 General description
Passivated thyristor in a SOT78 plastic package.
1.2 Features
I High thermal cycling performance I Tj is 150 C capable I VDRM, VRRM is 1000 V capable
1.3 Applications
I Motor control I Ignition circuits I Static switching I Protection circuits
1.4 Quick reference data
I VDRM 1000 V I VRRM 1000 V I ITSM 120 A (t = 10 ms) I IT(RMS) 12 A I IGT 15 mA I Tj 150 C
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description cathode (K) anode (A) gate (G) mounting base; connected to anode
mb A G
sym037
Simplified outline
Symbol
K
123
SOT78 (3-lead TO-220AB)
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
3. Ordering information
Table 2. Ordering information Package Name BT151-1000RT SC-46 Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak on-state current half sine wave; Tmb 134 C; see Figure 1 all conduction angles; see Figure 4 and 5 half sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 10 ms t = 8.3 ms I2t dIT/dt IGM PGM PG(AV) Tstg Tj I2t for fusing t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/s rate of rise of on-state current peak gate current peak gate power average gate power storage temperature junction temperature over any 20 ms period -40 120 131 72 50 2 5 0.5 +150 150 A A A2s A/s A W W C C Conditions Min Max 1000 1000 7.5 12 Unit V V A A
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
2 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
15 Ptot (W) 1.9 2.2 10 4 conduction angle (degrees) 30 60 90 120 180 0 0 2 4 6 form factor a 4 2.8 2.2 1.9 1.57 2.8
003aab830
a = 1.57
5
8 IT(AV) (A)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
003aab829
160 ITSM (A) 120
80
IT
ITSM
40
t tp Tj initial = 25 C max
0 1 10
102
n (number of cycles)
103
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
3 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
103
001aaa956
ITSM (A)
dlT/dt limit
102
IT
ITSM
t tp Tj initial = 25 C max
10 10-5
10-4
10-3 tp (s)
10-2
tp 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa954
25 IT(RMS) (A) 20
16 IT(RMS) (A) 12
003aab828
15 8 10 4 5
0 10-2
10-1
1 10 surge duration (s)
0 -50
0
50
100 Tmb (C)
150
f = 50 Hz; Tmb 134 C
Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents
Fig 5. RMS on-state current as a function of mounting base temperature; maximum values
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
4 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
5. Thermal characteristics
Table 4. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 6 in free air Min Typ 60 Max 1.3 Unit K/W K/W
10 Zth(j-mb)
(K/W)
001aaa962
1
10-1
P = tp T
10-2
tp T t
10-3 10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
5 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
6. Characteristics
Table 5. Characteristics Tj = 25 C unless otherwise stated. Symbol IGT IL IH VT VGT Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage Conditions VD = 12 V; IT = 100 mA; see Figure 8 VD = 12 V; IGT = 100 mA; see Figure 10 VD = 12 V; IGT = 100 mA; see Figure 11 IT = 23 A IT = 100 mA; see Figure 7 VD = 12 V VD = VDRM(max); Tj = 150 C ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage gate-controlled turn-on time commutated turn-off time VR = VDRM(max); Tj = 150 C VR = VRRM(max); Tj = 150 C VDM = 0.67 x VDRM(max); Tj = 150 C; exponential waveform; gate open circuit; see Figure 12 ITM = 40 A; VD = VDRM(max); IG = 100 mA; dIG/dt = 5 A/s VDM = 0.67 x VDRM(max); Tj = 150 C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/s; dVD/dt = 50 V/s; RGK = 100 0.25 0.6 0.4 0.5 0.5 300 1.5 2.5 2.5 V V mA mA V/s Min 2 Typ 1.4 Max 15 40 20 1.75 Unit mA mA mA V Static characteristics
Dynamic characteristics
tgt tq
-
2 70
-
s s
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
6 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
1.6 VGT VGT(25C) 1.2
003aab823
3 IGT IGT(25C) 2
003aab824
0.8
1
0.4 -50
0
50
100 Tj (C)
150
0 -50
0
50
100 Tj (C)
150
Fig 7. Normalized gate trigger voltage as a function of junction temperature
001aaa959
Fig 8. Normalized gate trigger current as a function of junction temperature
3 IL IL(25C) 2
003aab825
30 IT (A) 20
(1)
(2)
(3)
10
1
0 0 0.5 1 1.5 VT (V) 2
0 -50
0
50
100 Tj (C)
150
Vo = 1.06 V Rs = 0.0304 (1) Tj = 150 C; typical values (2) Tj = 150 C; maximum values (3) Tj = 25 C; maximum values
Fig 9. On-state current as a function of on-state voltage
Fig 10. Normalized latching current as a function of junction temperature
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
7 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
3 IH IH(25C) 2
003aab826
104 dVD/dt (V/s) 103
003aab827
1
102
0 -50
10 0 50 100 Tj (C) 150 0 50 100 Tj (C) 150
Gate open circuit
Fig 11. Normalized holding current as a function of junction temperature
Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
8 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
OUTLINE VERSION SOT78
REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46
EUROPEAN PROJECTION
ISSUE DATE 05-03-22 05-10-25
Fig 13. Package outline SOT78 (3-lead TO-220AB)
BT151-1000RT_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
9 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
8. Revision history
Table 6. Revision history Release date 20070806 Data sheet status Product data sheet Change notice Supersedes Document ID BT151-1000RT_1
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
10 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BT151-1000RT_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 6 August 2007
11 of 12
NXP Semiconductors
BT151-1000RT
12 A thyristor high blocking voltage high operating temperature
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 August 2007 Document identifier: BT151-1000RT_1

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